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Part Number Overview
Manufacturer Part Number
IRLR3717PBF
Description
MOSFET N-CH 20V 120A DPAK
Detailed Description
N-Channel 20 V 120A (Tc) 89W (Tc) Surface Mount TO-252AA (DPAK)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
75
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2830 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
89W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001568638
2156-IRLR3717PBF
*IRLR3717PBF
INFINFIRLR3717PBF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLR3717PBF
Documents & Media
Datasheets
1(IRLR3717PbF, IRLU3717PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
()
Design Resources
1(IRLR3717PBF Saber Model)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRLR3717PbF, IRLU3717PbF)
Simulation Models
1(IRLR3717PBF Spice Model)
Quantity Price
-
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