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Part Number Overview
Manufacturer Part Number
IRFHM8337TRPBF
Description
MOSFET N-CH 30V 12A 8PQFN
Detailed Description
N-Channel 30 V 12A (Ta) 2.8W (Ta), 25W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
4,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12.4mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
8.1 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
755 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (3.3x3.3), Power33
Package / Case
8-PowerTDFN
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001572684
2156-IRFHM8337TRPBF
IRFHM8337TRPBFTR
IFEINFIRFHM8337TRPBF
IRFHM8337TRPBFDKR
IRFHM8337TRPBFCT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFHM8337TRPBF
Documents & Media
Datasheets
1(IRFHM8337(TR)PBF)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRFHM8337(TR)PBF)
Simulation Models
1(IRFHM8337TRPBF Saber Model)
Quantity Price
-
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