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Part Number Overview
Manufacturer Part Number
TPCC8105,L1Q(CM
Description
MOSFET P-CH 30V 23A 8TSON
Detailed Description
P-Channel 30 V 23A (Ta) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
5,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSVI
Package
Tape & Reel (TR)
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7.8mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id
2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 10 V
Vgs (Max)
+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds
3240 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
700mW (Ta), 30W (Tc)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.3x3.3)
Package / Case
8-VDFN Exposed Pad
Base Product Number
TPCC8105
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TPCC8105,L1Q(CM
Documents & Media
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Quantity Price
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Substitutes
Part No. : TPCC8105,L1Q
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 4,900
Unit Price. : $0.79000
Substitute Type. : Parametric Equivalent
Quantity Available. : 4,900
Unit Price. : $0.79000
Substitute Type. : Parametric Equivalent