Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
360mOhm @ 7.5A, 15V
Vgs(th) (Max) @ Id
3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs
9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 600 V
Power Dissipation (Max)
54W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Base Product Number
E3M0280090