Part Number Overview

Manufacturer Part Number
SUD06N10-225L-GE3
Description
MOSFET N-CH 100V 6.5A TO252AA
Detailed Description
N-Channel 100 V 6.5A (Tc) 1.25W (Ta), 16.7W (Tc) Surface Mount TO-252AA
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
2,000
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
200mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.25W (Ta), 16.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
SUD06

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

SUD06N10-225L-GE3CT
SUD06N10-225L-GE3-ND
SUD06N10-225L-GE3DKR
SUD06N10-225L-GE3TR

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SUD06N10-225L-GE3

Documents & Media

PCN Obsolescence/ EOL
1(Commercial Mosfet OBS 29/Apr/2016)
HTML Datasheet
1(SUD06N10-225L-GE3)
Product Drawings
1(TO-252AA Drawing)

Quantity Price

-

Substitutes

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