Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
2.6A
Rds On (Max) @ Id, Vgs
160mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
200pF @ 30V
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
NDS995