Part Number Overview

Manufacturer Part Number
IPB60R230P6ATMA1
Description
MOSFET N-CH 600V 16.8A TO263-3
Detailed Description
N-Channel 600 V 16.8A (Tc) 126W (Tc) Surface Mount PG-TO263-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
CoolMOS™ P6
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
16.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
230mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 530µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1450 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
126W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-1
Package / Case
TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Base Product Number
IPB60R

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB60R230P6ATMA1

Documents & Media

Datasheets
1(IPx60R230P6)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx60R230P6)

Quantity Price

-

Substitutes

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