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Part Number Overview
Manufacturer Part Number
SQM110N05-06L_GE3
Description
MOSFET N-CH 55V 110A TO263
Detailed Description
N-Channel 55 V 110A (Tc) 157W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Vishay Siliconix
Standard LeadTime
22 Weeks
Edacad Model
Standard Package
800
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4440 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
157W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SQM110
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SQM110N05-06L_GE3TR
SQM110N05-06L_GE3DKR
SQM110N05-06L-GE3-ND
SQM110N05-06L-GE3
SQM110N05-06L_GE3-ND
SQM110N05-06L_GE3CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SQM110N05-06L_GE3
Documents & Media
PCN Assembly/Origin
1(SIL-044-2014-Rev-1 20/May/2014)
PCN Part Number
1(New Ordering Code 19/Mar/2015)
HTML Datasheet
1(SQM110N05-06L)
Quantity Price
Quantity: 5600
Unit Price: $1.27987
Packaging: Tape & Reel (TR)
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