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Part Number Overview
Manufacturer Part Number
BSS816NW L6327
Description
MOSFET N-CH 20V 1.4A SOT323-3
Detailed Description
N-Channel 20 V 1.4A (Ta) 500mW (Ta) Surface Mount PG-SOT323
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 2.5V
Rds On (Max) @ Id, Vgs
160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id
750mV @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 2.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT323
Package / Case
SC-70, SOT-323
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
BSS816NW L6327-ND
BSS816NWL6327
SP000464852
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSS816NW L6327
Documents & Media
Datasheets
1(BSS816NW)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSS816NW)
Quantity Price
-
Substitutes
Part No. : BSS816NWH6327XTSA1
Manufacturer. : Infineon Technologies
Quantity Available. : 146,502
Unit Price. : $0.41000
Substitute Type. : Parametric Equivalent
Quantity Available. : 146,502
Unit Price. : $0.41000
Substitute Type. : Parametric Equivalent