Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
12.5A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 10 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
250 µA @ 1200 V
Capacitance @ Vr, F
755pF @ 0V, 1MHz
Mounting Type
Through Hole
Supplier Device Package
ISO247
Operating Temperature - Junction
-40°C ~ 150°C
Base Product Number
DCG10