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Part Number Overview
Manufacturer Part Number
SIHB22N60S-E3
Description
MOSFET N-CH 600V 22A TO263
Detailed Description
N-Channel 600 V 22A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2810 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB22
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIHB22N60S-E3TRINACTIVE
SIHB22N60SE3
SIHB22N60S-E3TR
SIHB22N60S-E3CT-ND
SIHB22N60S-E3TR-ND
SIHB22N60S-E3DKR
SIHB22N60S-E3DKR-ND
SIHB22N60S-E3CT
SIHB22N60S-E3DKRINACTIVE
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHB22N60S-E3
Documents & Media
Datasheets
1(SiHB22N60S)
PCN Obsolescence/ EOL
()
PCN Assembly/Origin
1(SIL-079-2014-Rev-0 26/Sep/2014)
HTML Datasheet
1(SiHB22N60S)
Quantity Price
-
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