Part Number Overview

Manufacturer Part Number
SIHW21N80AE-GE3
Description
MOSFET N-CH 800V 17.4A TO247AD
Detailed Description
N-Channel 800 V 17.4A (Tc) 32W (Tc) Through Hole TO-247AD
Manufacturer
Vishay Siliconix
Standard LeadTime
21 Weeks
Edacad Model
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
E
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
17.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
235mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1388 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
32W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Package / Case
TO-247-3
Base Product Number
SIHW21

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHW21N80AE-GE3

Documents & Media

Datasheets
1(SIHW21N80AE Datasheet)
Featured Product
1(MOSFETs in 5G)
HTML Datasheet
1(SIHW21N80AE Datasheet)

Quantity Price

Quantity: 2010
Unit Price: $2.23838
Packaging: Tube
MinMultiplier: 1
Quantity: 1020
Unit Price: $2.3772
Packaging: Tube
MinMultiplier: 1
Quantity: 510
Unit Price: $2.77629
Packaging: Tube
MinMultiplier: 1
Quantity: 120
Unit Price: $3.12333
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $3.644
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $4.6
Packaging: Tube
MinMultiplier: 1

Substitutes

Part No. : SIHG21N80AE-GE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 495
Unit Price. : $4.60000
Substitute Type. : Parametric Equivalent