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Part Number Overview
Manufacturer Part Number
IPAW60R190CEXKSA1
Description
MOSFET N-CH 600V 26.7A TO220
Detailed Description
N-Channel 600 V 26.7A (Tc) 34W (Tc) Through Hole PG-TO220-FP
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
45
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
26.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
34W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
TO-220-3 Full Pack
Base Product Number
IPAW60
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001391612
INFINFIPAW60R190CEXKSA1
2156-IPAW60R190CEXKSA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPAW60R190CEXKSA1
Documents & Media
Datasheets
1(IPAW60R190CE)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPAW60R190CE)
Quantity Price
-
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