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Part Number Overview
Manufacturer Part Number
SIHB12N60ET1-GE3
Description
MOSFET N-CH 600V 12A TO263
Detailed Description
N-Channel 600 V 12A (Tc) 147W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Vishay Siliconix
Standard LeadTime
10 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
E
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
937 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
147W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB12
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHB12N60ET1-GE3
Documents & Media
-
Quantity Price
Quantity: 800
Unit Price: $1.11655
Packaging: Bulk
MinMultiplier: 800
Packaging: Bulk
MinMultiplier: 800
Substitutes
Part No. : R6015FNJTL
Manufacturer. : Rohm Semiconductor
Quantity Available. : 980
Unit Price. : $3.32000
Substitute Type. : Similar
Quantity Available. : 980
Unit Price. : $3.32000
Substitute Type. : Similar