Part Number Overview

Manufacturer Part Number
IXTH52N65X
Description
MOSFET N-CH 650V 52A TO247
Detailed Description
N-Channel 650 V 52A (Tc) 660W (Tc) Through Hole TO-247 (IXTH)
Manufacturer
IXYS
Standard LeadTime
Edacad Model
IXTH52N65X Models
Standard Package
Supplier Stocks

Technical specifications

Mfr
IXYS
Series
Ultra X
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
68mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
113 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
660W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3
Base Product Number
IXTH52

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTH52N65X

Documents & Media

Datasheets
1(IXTH52N65X)
Environmental Information
1(Ixys IC REACH)
PCN Obsolescence/ EOL
1(Mult DEV EOL/OBS 08/Nov/2023)
HTML Datasheet
1(IXTH52N65X)
EDA Models
1(IXTH52N65X Models)

Quantity Price

Quantity: 30
Unit Price: $8.84533
Packaging: Tube
MinMultiplier: 30

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