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Part Number Overview
Manufacturer Part Number
FQD5N50CTM-WS
Description
MOSFET N-CHANNEL 500V 4A TO252
Detailed Description
N-Channel 500 V 4A (Tc) 2.5W (Ta) Surface Mount TO-252 (DPAK)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQD5N50CTM-WS Models
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
625 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
FQD5N50
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FQD5N50CTM_WS
FQD5N50CTM_WS-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQD5N50CTM-WS
Documents & Media
Datasheets
1(FQ(D,U)5N50C)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Wafer Fab 28/Jul/2021)
PCN Packaging
1(Mult Devices 24/Oct/2017)
HTML Datasheet
1(FQ(D,U)5N50C)
EDA Models
1(FQD5N50CTM-WS Models)
Quantity Price
-
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