Part Number Overview

Manufacturer Part Number
SCTW100N65G2AG
Description
SICFET N-CH 650V 100A HIP247
Detailed Description
N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™
Manufacturer
STMicroelectronics
Standard LeadTime
52 Weeks
Edacad Model
SCTW100N65G2AG Models
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
162 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3315 pF @ 520 V
FET Feature
-
Power Dissipation (Max)
420W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Base Product Number
SCTW100

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics SCTW100N65G2AG

Documents & Media

Datasheets
1(SCTW100N65G2AG)
PCN Design/Specification
1(TO247 Frame 24-Feb-2022)
PCN Packaging
1(Standard outer labelling 15/Nov/2023)
EDA Models
1(SCTW100N65G2AG Models)

Quantity Price

Quantity: 120
Unit Price: $27.27
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $29.088
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $35.09
Packaging: Tube
MinMultiplier: 1

Substitutes

Part No. : MSC015SMA070B
Manufacturer. : Microchip Technology
Quantity Available. : 450
Unit Price. : $35.76000
Substitute Type. : Similar
Part No. : SCT3022ALGC11
Manufacturer. : Rohm Semiconductor
Quantity Available. : 1,495
Unit Price. : $50.98000
Substitute Type. : Similar