Part Number Overview

Manufacturer Part Number
IXFX32N100Q3
Description
MOSFET N-CH 1000V 32A PLUS247-3
Detailed Description
N-Channel 1000 V 32A (Tc) 1250W (Tc) Through Hole PLUS247™-3
Manufacturer
IXYS
Standard LeadTime
26 Weeks
Edacad Model
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
IXYS
Series
HiPerFET™, Q3 Class
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
320mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
9940 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PLUS247™-3
Package / Case
TO-247-3 Variant
Base Product Number
IXFX32

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Other Names

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Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFX32N100Q3

Documents & Media

Datasheets
1(IXFx32N100Q3)
Environmental Information
1(Ixys IC REACH)
Featured Product
1(Q3-Class HiPerFET™ Power MOSFETs)
HTML Datasheet
1(IXFx32N100Q3)

Quantity Price

Quantity: 100
Unit Price: $25.1887
Packaging: Tube
MinMultiplier: 1
Quantity: 10
Unit Price: $28.799
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $32.41
Packaging: Tube
MinMultiplier: 1

Substitutes

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