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Part Number Overview
Manufacturer Part Number
HN3C10FUTE85LF
Description
RF TRANS 2 NPN 12V 7GHZ US6
Detailed Description
RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)
12V
Frequency - Transition
7GHz
Noise Figure (dB Typ @ f)
1.1dB @ 1GHz
Gain
11.5dB
Power - Max
200mW
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 20mA, 10V
Current - Collector (Ic) (Max)
80mA
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6
Base Product Number
HN3C10
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
HN3C10FUTE85LFTR
HN3C10FUTE85LFCT
HN3C10FUTE85LFDKR
HN3C10FU(TE85L,F)
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Toshiba Semiconductor and Storage HN3C10FUTE85LF
Documents & Media
-
Quantity Price
Quantity: 100
Unit Price: $0.3354
Packaging: Cut Tape (CT)
MinMultiplier: 1
Packaging: Cut Tape (CT)
MinMultiplier: 1
Quantity: 10
Unit Price: $0.482
Packaging: Cut Tape (CT)
MinMultiplier: 1
Packaging: Cut Tape (CT)
MinMultiplier: 1
Quantity: 1
Unit Price: $0.57
Packaging: Cut Tape (CT)
MinMultiplier: 1
Packaging: Cut Tape (CT)
MinMultiplier: 1
Substitutes
Part No. : BFS483H6327XTSA1
Manufacturer. : Infineon Technologies
Quantity Available. : 48,521
Unit Price. : $0.73000
Substitute Type. : Similar
Quantity Available. : 48,521
Unit Price. : $0.73000
Substitute Type. : Similar