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Part Number Overview
Manufacturer Part Number
BUK6E2R0-30C127
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 30 V 120A (Tc) 306W (Tc) Through Hole I2PAK
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
329
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
229 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
14964 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
306W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
NEXNXPBUK6E2R0-30C127
2156-BUK6E2R0-30C127
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK6E2R0-30C127
Documents & Media
Datasheets
1(BUK6E2R0-30C)
HTML Datasheet
1(BUK6E2R0-30C)
Quantity Price
-
Substitutes
-