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Part Number Overview
Manufacturer Part Number
SI4966DY-T1-E3
Description
MOSFET 2N-CH 20V 8SOIC
Detailed Description
Mosfet Array 20V 2W Surface Mount 8-SOIC
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
25mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4966
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SI4966DY-T1-E3CT
SI4966DYT1E3
SI4966DY-T1-E3DKR
SI4966DY-T1-E3-ND
SI4966DY-T1-E3TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI4966DY-T1-E3
Documents & Media
Datasheets
1(SI4966DY)
PCN Obsolescence/ EOL
1(Mult Devices 15/Sep/2017)
HTML Datasheet
1(SI4966DY)
Quantity Price
-
Substitutes
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