Part Number Overview

Manufacturer Part Number
FQD2N90TF
Description
MOSFET N-CH 900V 1.7A DPAK
Detailed Description
N-Channel 900 V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252 (DPAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
503
Supplier Stocks

Technical specifications

Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.2Ohm @ 850mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

FAIFSCFQD2N90TF
2156-FQD2N90TF-FSTR

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQD2N90TF

Documents & Media

Datasheets
1(FQD2N90TF)

Quantity Price

Quantity: 503
Unit Price: $0.6
Packaging: Bulk
MinMultiplier: 503

Substitutes

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