Part Number Overview

Manufacturer Part Number
AOTF18N65L
Description
MOSFET N-CH 650V 18A TO220-3F
Detailed Description
N-Channel 650 V 18A (Tc) 50W (Tc) Through Hole TO-220F
Manufacturer
Alpha & Omega Semiconductor Inc.
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks

Technical specifications

Mfr
Alpha & Omega Semiconductor Inc.
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
390mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3785 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack
Base Product Number
AOTF18

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Alpha & Omega Semiconductor Inc. AOTF18N65L

Documents & Media

Datasheets
1(AOTF18N65(L))
Other Related Documents
1(AOS Green Policy)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 3/Jul/2020)
PCN Design/Specification
1(Mult Dev Molding Chg 8/Jul/2020)
PCN Assembly/Origin
1(Mult Dev Assem/Test Chg 19/Jul/2018)
HTML Datasheet
1(AOTF18N65(L))
Product Drawings
1(TO220F Pkg Drawing)

Quantity Price

-

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