Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
340mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 300 V
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
TK12P60