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Part Number Overview
Manufacturer Part Number
IRF640NSTRRPBF
Description
MOSFET N-CH 200V 18A D2PAK
Detailed Description
N-Channel 200 V 18A (Tc) 150W (Tc) Surface Mount D2PAK
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
800
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1160 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IRF640
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRF640NSTRRPBFDKR
SP001561802
IRF640NSTRRPBF-ND
IRF640NSTRRPBFTR
IRF640NSTRRPBFCT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF640NSTRRPBF
Documents & Media
Datasheets
1(IRF640N(S,L)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IRF640N(S,L)PbF)
Simulation Models
1(IRF640NSPBF Saber Model)
Quantity Price
Quantity: 1
Unit Price: $1.57
Packaging: Cut Tape (CT)
MinMultiplier: 1
Packaging: Cut Tape (CT)
MinMultiplier: 1
Quantity: 1
Unit Price: $1.57
Packaging: Digi-Reel®
MinMultiplier: 1
Packaging: Digi-Reel®
MinMultiplier: 1
Substitutes
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