China
Spain
Rusia
Italy
GermanyDMJ70H1D3SJ3
Part Number Overview
Manufacturer Part Number
DMJ70H1D3SJ3
Description
MOSFET N-CH 700V 4.6A TO251
Detailed Description
N-Channel 700 V 4.6A (Tc) 41W (Tc) Through Hole TO-251
Manufacturer
Diodes Incorporated
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Diodes Incorporated
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13.9 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
351 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
41W (Tc)
Operating Temperature
-55°C ~ 155°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
DMJ70
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated DMJ70H1D3SJ3
Documents & Media
Datasheets
1(DMJ70H1D3SJ3)
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Assembly/Origin
1(Mult Dev Site Chg 6/Aug/2020)
Quantity Price
-
Substitutes
Part No. : IPU80R1K4CEBKMA1
Manufacturer. : Rochester Electronics, LLC
Quantity Available. : 19,000
Unit Price. : $0.36000
Substitute Type. : Similar
Quantity Available. : 19,000
Unit Price. : $0.36000
Substitute Type. : Similar