Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
208mOhm @ 5A, 18V
Vgs(th) (Max) @ Id
5.6V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
398 pF @ 800 V
Power Dissipation (Max)
103W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Base Product Number
SCT3160