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Part Number Overview
Manufacturer Part Number
2SC2462LDTR-E
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Detailed Description
Bipolar (BJT) Transistor NPN 40 V 100 mA 150 mW Surface Mount 3-MPAK
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
1,623
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
40 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 2mA, 12V
Power - Max
150 mW
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
3-MPAK
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
RENRNS2SC2462LDTR-E
2156-2SC2462LDTR-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SC2462LDTR-E
Documents & Media
Datasheets
1(2SC2462LCTR-E Datasheet)
Quantity Price
Quantity: 1623
Unit Price: $0.18
Packaging: Bulk
MinMultiplier: 1623
Packaging: Bulk
MinMultiplier: 1623
Substitutes
-