Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
21mOhm @ 55.8A, 15V
Vgs(th) (Max) @ Id
3.6V @ 15.5mA
Gate Charge (Qg) (Max) @ Vgs
188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
5011 pF @ 400 V
Power Dissipation (Max)
416W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Base Product Number
C3M0015065