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Part Number Overview
Manufacturer Part Number
APTM100H46FT3G
Description
MOSFET 4N-CH 1000V 19A SP3
Detailed Description
Mosfet Array 1000V (1kV) 19A 357W Chassis Mount SP3
Manufacturer
Microchip Technology
Standard LeadTime
48 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
POWER MOS 8™
Package
Bulk
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
4 N-Channel (Full Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1000V (1kV)
Current - Continuous Drain (Id) @ 25°C
19A
Rds On (Max) @ Id, Vgs
552mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
6800pF @ 25V
Power - Max
357W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP3
Supplier Device Package
SP3
Base Product Number
APTM100
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microchip Technology APTM100H46FT3G
Documents & Media
Datasheets
1(APTM100H46FT3G)
Environmental Information
()
PCN Design/Specification
1(SP3F Plastic Frame Update 16/Jul/2015)
PCN Assembly/Origin
1(Assembly Site 04/Aug/2023)
HTML Datasheet
1(APTM100H46FT3G)
Quantity Price
Quantity: 12
Unit Price: $103.68
Packaging: Bulk
MinMultiplier: 12
Packaging: Bulk
MinMultiplier: 12
Substitutes
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