Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V, 20V
Rds On (Max) @ Id, Vgs
67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 400 V
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
H2PAK-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
SCTH35