Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)
Rds On (Max) @ Id, Vgs
3.2Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
15.1pF @ 3V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6
Base Product Number
SSM6N48