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Part Number Overview
Manufacturer Part Number
IPD800N06NGBTMA1
Description
MOSFET N-CH 60V 16A TO252-3
Detailed Description
N-Channel 60 V 16A (Tc) 47W (Tc) Surface Mount PG-TO252-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 16µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
370 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
47W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Base Product Number
IPD800N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IPD800N06NGBTMA1-ITTR-ND
IPD800N06NGINCT-ND
IPD800N06NGINDKR-ND
IPD800N06NGXT
IPD800N06NGBTMA1CT
IPD800N06N G
IPD800N06NGINTR-ND
INFINFIPD800N06NGBTMA1
IPD800N06NGINTR
IPD800N06NGINDKR
SP000204179
IPD800N06NGINCT
IPD800N06N G-ND
SP000443764
IPD800N06NGBTMA1TR
IPD800N06NGBTMA1DKR
IPD800N06NG
2156-IPD800N06NGBTMA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD800N06NGBTMA1
Documents & Media
Datasheets
1(IPD800N06N G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPD800N06N G)
Quantity Price
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