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Part Number Overview
Manufacturer Part Number
NTD4809NT4G
Description
POWER FIELD-EFFECT TRANSISTOR, 9
Detailed Description
N-Channel 30 V 9.6A (Ta), 58A (Tc) 1.4W (Ta), 52W (Tc) Surface Mount DPAK
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
789
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 11.5V
Rds On (Max) @ Id, Vgs
9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 11.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1456 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
1.4W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
ONSONSNTD4809NT4G
2156-NTD4809NT4G-OS
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD4809NT4G
Documents & Media
Datasheets
1(NTD4809N-35G)
Quantity Price
Quantity: 789
Unit Price: $0.38
Packaging: Bulk
MinMultiplier: 789
Packaging: Bulk
MinMultiplier: 789
Substitutes
-