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Part Number Overview
Manufacturer Part Number
SISS42DN-T1-GE3
Description
MOSFET N-CH 100V 11.8/40.5A PPAK
Detailed Description
N-Channel 100 V 11.8A (Ta), 40.5A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
Manufacturer
Vishay Siliconix
Standard LeadTime
18 Weeks
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
11.8A (Ta), 40.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
14.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1850 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
4.8W (Ta), 57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
Base Product Number
SISS42
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SISS42DN-T1-GE3CT
SISS42DN-T1-GE3TR
SISS42DN-GE3
SISS42DN-T1-GE3DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SISS42DN-T1-GE3
Documents & Media
Datasheets
1(SISS42DN)
PCN Assembly/Origin
1(Manufacturing Capacity Expansion 27/Jul/2023)
HTML Datasheet
1(SISS42DN)
Quantity Price
Quantity: 9000
Unit Price: $0.625
Packaging: Tape & Reel (TR)
MinMultiplier: 6000
Packaging: Tape & Reel (TR)
MinMultiplier: 6000
Quantity: 6000
Unit Price: $0.6464
Packaging: Tape & Reel (TR)
MinMultiplier: 6000
Packaging: Tape & Reel (TR)
MinMultiplier: 6000
Substitutes
-