China
Spain
Rusia
Italy
GermanyIRLR8103
Part Number Overview
Manufacturer Part Number
IRLR8103
Description
MOSFET N-CH 30V 89A D-PAK
Detailed Description
N-Channel 30 V 89A (Ta) 89W (Ta) Surface Mount TO-252AA (DPAK)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
89A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 5 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
89W (Ta)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
-
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLR8103
Documents & Media
Datasheets
1(IRLR8103/8503)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRLR8103/8503)
Quantity Price
-
Substitutes
-