Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
240mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
80 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
700mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-WEMT
Package / Case
6-SMD, Flat Leads