Part Number Overview

Manufacturer Part Number
IRLU3636PBF
Description
MOSFET N-CH 60V 50A IPAK
Detailed Description
N-Channel 60 V 50A (Tc) 143W (Tc) Through Hole I-PAK
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
3779 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
143W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IRLU3636

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

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Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLU3636PBF

Documents & Media

Datasheets
1(IRL(R,U)3636PBF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Design Resources
1(IRLR3636PBF Saber Model)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
PCN Other
1(Mult Dev Lot Code Standardization 11/Nov/2022)
HTML Datasheet
1(IRL(R,U)3636PBF)
Simulation Models
1(IRLR_U3636PBF Spice Model)

Quantity Price

Quantity: 3000
Unit Price: $1.00734
Packaging: Tube
MinMultiplier: 3000

Substitutes

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