Mfr
Infineon Technologies
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
24A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
33 µA @ 420 V
Capacitance @ Vr, F
495pF @ 1V, 1MHz
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-2
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
IDH10G65