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Part Number Overview
Manufacturer Part Number
HN3C51F-GR(TE85L,F
Description
TRANS 2NPN 120V 0.1A SM6
Detailed Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
2 NPN (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
120V
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Power - Max
300mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Supplier Device Package
SM6
Base Product Number
HN3C51
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
HN3C51FGR(TE85LFTR
HN3C51F-GR(TE85LF)CT-ND
HN3C51F-GR(TE85LF)TR-ND
HN3C51F-GR(TE85LFDKR
HN3C51F-GR(TE85LF)TR
HN3C51F-GR(TE85LFTR
HN3C51F-GR(TE85L,F)
HN3C51FGR(TE85LFTR-ND
HN3C51F-GRTE85LF
HN3C51F-GR(TE85LFCT
HN3C51F-GR(TE85LF)CT
HN3C51F-GR(TE85LF)DKR
HN3C51F-GR(TE85LF)DKR-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Toshiba Semiconductor and Storage HN3C51F-GR(TE85L,F
Documents & Media
Datasheets
1(HN3C51F)
HTML Datasheet
1(HN3C51F)
Quantity Price
-
Substitutes
-