Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
15A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
200 µA @ 1200 V
Capacitance @ Vr, F
612pF @ 1V, 100kHz
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
FFSH20120