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Part Number Overview
Manufacturer Part Number
FJN3302RTA
Description
TRANS PREBIAS NPN 50V TO92-3
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FJN3302RTA Models
Standard Package
2,000
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250 MHz
Power - Max
300 mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
FJN330
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
FJN3302RTACT
2832-FJN3302RTA
FJN3302RTATB
FJN3302RTA-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/onsemi FJN3302RTA
Documents & Media
Datasheets
1(FJN3302R)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 16/Jul/2019)
PCN Design/Specification
()
PCN Packaging
1(Mult Devices 24/Oct/2017)
EDA Models
1(FJN3302RTA Models)
Quantity Price
-
Substitutes
-