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Part Number Overview
Manufacturer Part Number
MCB60I1200TZ
Description
1200V 90A SIC POWER MOSFET
Detailed Description
N-Channel 1200 V 90A (Tc) Surface Mount TO-268AA (D3Pak-HV)
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id
4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
2790 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268AA (D3Pak-HV)
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number
MCB60I1200
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS MCB60I1200TZ
Documents & Media
Datasheets
1(MCB60I1200TZ Datasheet)
Featured Product
1(SiC Power MOSFET and Diode Gate Drive Evaluation Board Kit)
HTML Datasheet
1(MCB60I1200TZ Datasheet)
Quantity Price
-
Substitutes
-