Part Number Overview

Manufacturer Part Number
IRFI830G
Description
MOSFET N-CH 500V 3.1A TO220-3
Detailed Description
N-Channel 500 V 3.1A (Tc) 35W (Tc) Through Hole TO-220-3
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
IRFI830G Models
Standard Package
1,000
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
610 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
IRFI830

Environmental & Export Classifications

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

Q932707
*IRFI830G

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFI830G

Documents & Media

Datasheets
1(IRFI830G)
HTML Datasheet
1(IRFI830G)
EDA Models
1(IRFI830G Models)

Quantity Price

-

Substitutes

Part No. : IRFI830GPBF
Manufacturer. : Vishay Siliconix
Quantity Available. : 865
Unit Price. : $1.73000
Substitute Type. : Parametric Equivalent
Part No. : TK5A50D(STA4,Q,M)
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 34
Unit Price. : $1.20000
Substitute Type. : Similar
Part No. : TK5A55D(STA4,Q,M)
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 47
Unit Price. : $1.33000
Substitute Type. : Similar