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Part Number Overview
Manufacturer Part Number
BCR35PNE6327BTSA1
Description
TRANS NPN/PNP PREBIAS SOT363
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-PO
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
-
Frequency - Transition
150MHz
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
6-VSSOP, SC-88, SOT-363
Supplier Device Package
PG-SOT363-PO
Base Product Number
BCR35
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
BCR 35PN E6327
BCR35PNE6327BTSA1TR
BCR 35PN E6327-ND
BCR35PNE6327XT
SP000010831
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/Infineon Technologies BCR35PNE6327BTSA1
Documents & Media
Datasheets
1(BCR35PN)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(BCR35PN)
Quantity Price
-
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