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Part Number Overview
Manufacturer Part Number
FCPF165N65S3L1
Description
MOSFET N-CH 650V 19A TO220F-3
Detailed Description
N-Channel 650 V 19A (Tc) 35W (Tc) Through Hole TO-220F-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
SuperFET® III
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1415 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
-55°C ~ 150°C
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Base Product Number
FCPF165
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2832-FCPF165N65S3L1
2156-FCPF165N65S3L1-OS
ONSONSFCPF165N65S3L1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FCPF165N65S3L1
Documents & Media
Datasheets
1(FCPF165N65S3L1)
Environmental Information
()
Featured Product
1(650 V, SuperFET® III MOSFETs)
PCN Obsolescence/ EOL
1(Mult Dev EOL 29/Jan/2021)
PCN Design/Specification
()
PCN Assembly/Origin
1(Mold Compound Change 21/Jul/2021)
PCN Packaging
1(Mult Devices 24/Oct/2017)
HTML Datasheet
1(FCPF165N65S3L1)
Quantity Price
-
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