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Part Number Overview
Manufacturer Part Number
IXFX34N80
Description
MOSFET N-CH 800V 34A PLUS247
Detailed Description
N-Channel 800 V 34A (Tc) 560W (Tc) Through Hole PLUS247™-3
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
HiPerFET™
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
240mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
270 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
560W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PLUS247™-3
Package / Case
TO-247-3 Variant
Base Product Number
IXFX34
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFX34N80
Documents & Media
Datasheets
1(IXF(K,X)34N80)
Environmental Information
1(Ixys IC REACH)
PCN Obsolescence/ EOL
1(Mult Devices OBS 24/Feb/2014)
HTML Datasheet
1(IXF(K,X)34N80)
Quantity Price
Quantity: 300
Unit Price: $19.4531
Packaging: Tube
MinMultiplier: 300
Packaging: Tube
MinMultiplier: 300
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