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Part Number Overview
Manufacturer Part Number
DMG8880LSS-13
Description
MOSFET N-CH 30V 11.6A 8SOP
Detailed Description
N-Channel 30 V 11.6A (Ta) 1.43W (Ta) Surface Mount 8-SO
Manufacturer
Diodes Incorporated
Standard LeadTime
Edacad Model
DMG8880LSS-13 Models
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Diodes Incorporated
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 11.6A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1289 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.43W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
DMG8880
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
DMG8880LSS-13DITR
DMG8880LSS13
DMG8880LSS-13DICT
DMG8880LSS-13DIDKR
1034-DMG8880LSS-13DIDKR
1034-DMG8880LSS-13DICT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated DMG8880LSS-13
Documents & Media
Datasheets
1(DMG8880LSS)
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Obsolescence/ EOL
1(Select Discrete Devices 20/Feb/2014)
PCN Design/Specification
1(Bond Wire 11/Nov/2011)
PCN Assembly/Origin
1(Mult Dev Wafer Fab Add 8/Aug/2012)
PCN Other
1(Multiple Device Changes 29/Apr/2013)
HTML Datasheet
1(DMG8880LSS)
EDA Models
1(DMG8880LSS-13 Models)
Quantity Price
-
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