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Part Number Overview
Manufacturer Part Number
IPD09N03LB G
Description
MOSFET N-CH 30V 50A TO252-3
Detailed Description
N-Channel 30 V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-11
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
58W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Base Product Number
IPD09N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000016412
IPD09N03LB G-ND
IPD09N03LBG
IPD09N03LBGXT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD09N03LB G
Documents & Media
Datasheets
1(IPx09N03LB G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx09N03LB G)
Quantity Price
-
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