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Part Number Overview
Manufacturer Part Number
IPD06N03LA G
Description
MOSFET N-CH 25V 50A TO252-3
Detailed Description
N-Channel 25 V 50A (Tc) 83W (Tc) Surface Mount PG-TO252-3-11
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2653 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
-
Base Product Number
IPD06N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPD06N03LAGINCT
IPD06N03LAGINCT-NDR
IPD06N03LAGXTINTR-ND
IPD06N03LAGXTINTR
IPD06N03LAINCT
IPD06N03LAGXT
IPD06N03LAINTR
IPD06N03LAGINDKR
IPD06N03LAGINTR-NDR
IPD06N03LAINTR-ND
IPD06N03LAG
IPD06N03LA
SP000017600
IPD06N03LAINCT-ND
IPD06N03LAGBUMA1
IPD06N03LAGXTINCT-ND
IPD06N03LAGXTINCT
IPD06N03LAGINTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD06N03LA G
Documents & Media
Datasheets
1(IPD06N03LA)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPD06N03LA)
Quantity Price
-
Substitutes
Part No. : IPD060N03LGATMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 1,559
Unit Price. : $0.95000
Substitute Type. : Direct
Quantity Available. : 1,559
Unit Price. : $0.95000
Substitute Type. : Direct